Method for depositing and reflow of a high quality etch resistant gapfill dielectric film
US11114333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2019 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Feb 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing a gapfill dielectric film that may be utilized for multi-colored patterning processes are provided. In one implementation, a method for processing a substrate is provided. The method comprises filling the one or more features of a substrate with a dielectric material. The dielectric material is a doped silicate glass selected from borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), and borosilicate glass (BSG). The method further comprises treating the substrate with a high-pressure anneal in the presence of an oxidizer to heal seams within the dielectric material. The high-pressure anneal comprises supplying an oxygen-containing gas mixture on a substrate in a processing chamber, maintaining the oxygen-containing gas mixture in the processing chamber at a process pressure at greater than 2 bar and thermally annealing the dielectric material in the presence of the oxygen-containing gas mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.