FinFET having locally higher fin-to-fin pitch

US11114435B2 · kind B2 · utility

Assignees

• IMEC VZW · BE
• Katholieke Universiteit Leuven · BE

Inventors

• Geert Hellings · Halle, BE
• Roman Boschke · Dresden, DE
• Dimitri Linten · Boortmeerbeek, BE
• Naoto Horiguchi · Leuven, BE

Key dates

• Filing date: Dec 16, 2016
• Grant date: Sep 7, 2021
• Expiry date: Dec 16, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

The disclosed technology generally relates to semiconductor devices, and more particularly to FinFET transistors. In one aspect, at least three fins are arranged to extend in parallel in a first direction and are laterally separated from each other in a second direction by shallow trench isolation structures having a first fin spacing, where at least a portion of each fin protrudes out from a substrate. At least a portion of each of a first fin and a second fin of the at least three fins vertically protrude to a level higher than an upper surface of the shallow trench isolation structures. A third fin is formed laterally between the first fin and the second fin in the second direction, where the third fin has a non-protruding region which extends vertically to a level below or equal to the upper surface of the shallow trench isolation structures.