Semiconductor device including capacitor
US11114541B2 · kind B2 · utility
0Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Sep 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.