Plasma etching method
US11120999B2 · kind B2 · utility
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Key dates
| Filing date | Dec 11, 2018 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Dec 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.