Method of etching, device manufacturing method, and plasma processing apparatus
US11121001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2020 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Aug 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a disclosed method, etching a film by using plasma of a first processing gas and etching the film by using plasma of a second processing gas are alternately repeated. The first processing gas and the second processing gas each include a fluorocarbon gas. In etching the film by using the plasma of the first processing gas and etching the film by using the plasma of the second processing gas, radio frequency power is used to attract ions to the substrate. The first processing gas further includes an additive gas that is a source for nitrogen or sulfur and fluorine. In the first processing gas, the flow rate of the additive gas is smaller than the flow rate of the fluorocarbon gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.