Systems and methods for etching metals and metal derivatives
US11121002B2 · kind B2 · utility
2Cited by
1,003References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Sep 14, 2021 |
| Priority date | — |
| Expiry date | Oct 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of a transition-metal-containing material. The methods may also include removing the transition-metal-containing material. The flowing and the contacting may be plasma-free operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.