Zhenjiang Cui
40Patents
9h-index
66Co-inventors
78Inventor score
Filing activity: Apr 11, 2001 → Jul 13, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7018941B2 | Post treatment of low k dielectric films | Electricity | 648 | Expired |
| US9355862B2 | Fluorine-based hardmask removal | Electricity | 147 | Active |
| US9478434B2 | Chlorine-based hardmask removal | Electricity | 133 | Active |
| US9947549B1 | Cobalt-containing material removal | Electricity | 103 | Active |
| US9576788B2 | Cleaning high aspect ratio vias | Electricity | 97 | Active |
| US7097886B2 | Deposition process for high aspect ratio trenches | Electricity | 36 | Expired |
| US7879683B2 | Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay | Electricity | 28 | Active |
| US7811924B2 | Air gap formation and integration using a patterning cap | Electricity | 25 | Active |
| US6936843B2 | Fixture used to prepare semiconductor specimens for film adhesion testing | Electricity | 20 | Expired |
| US7229911B2 | Adhesion improvement for low k dielectrics to conductive materials | Electricity | 8 | Expired |
| US8951911B2 | Process for damascene structure with reduced low-k damage | Electricity | 8 | Active |
| US7259111B2 | Interface engineering to improve adhesion between low k stacks | Electricity | 6 | Expired |
| US6818894B2 | Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance fourier transform infrared spectroscopy | Electricity | 6 | Expired |
| US6992024B2 | Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques | Electricity | 5 | Expired |
| US6878644B2 | Multistep cure technique for spin-on-glass films | Electricity | 5 | Expired |
| US6635144B2 | Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment | Electricity | 5 | Expired |
| US7547643B2 | Techniques promoting adhesion of porous low K film to underlying barrier layer | Electricity | 4 | Expired |
| US7588036B2 | Chamber clean method using remote and in situ plasma cleaning systems | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7189658B2 | Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7459404B2 | Adhesion improvement for low k dielectrics | Electricity | 2 | Active |
| US11121002B2 | Systems and methods for etching metals and metal derivatives | Electricity | 2 | Active |
| US11062921B1 | Systems and methods for aluminum-containing film removal | Electricity | 2 | Active |
| US11328909B2 | Chamber conditioning and removal processes | Electricity | 1 | Active |
| US6890597B2 | HDP-CVD uniformity control | Chemistry; Metallurgy | 1 | Expired |
| US10854426B2 | Metal recess for semiconductor structures | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.