Silicon controlled rectifier and manufacturing method therefor

US11121126B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christian Russ · Diedorf, DE
• Markus Eckinger · Regenstauf, DE
• Kai Esmark · Schwanau, DE

Key dates

• Filing date: Jan 29, 2020
• Grant date: Sep 14, 2021
• Expiry date: Jan 29, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127

Abstract

An embodiment of a silicon controlled rectifier (SCR) includes a semiconductor body, an active device region, and a device isolation region configured to electrically insulate the active device region from neighboring active device regions. First SCR regions and a second SCR region of a first conductivity type are in the active device region. A first pn-junction or Schottky junction is formed at an interface between the first SCR regions and the second SCR region. A first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another. A second pn-junction is formed at an interface between the second SCR region and a third SCR region of a second conductivity type. A third pn-junction is formed at an interface between the third SCR region and a fourth SCR region of the first conductivity type.