Inventor · Schwanau, DE

Kai Esmark

31Patents
6h-index
20Co-inventors
69Inventor score

Filing activity: May 31, 2002 → May 13, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6905892B2 Operating method for a semiconductor component Electricity 70 Expired
US9257523B2 Avalanche diode having an enhanced defect concentration level and method of making the same Electricity 39 Active
US9812438B2 Avalanche diode having an enhanced defect concentration level and method of making the same Electricity 38 Active
US7800128B2 Semiconductor ESD device and method of making same Electricity 17 Active
US6930501B2 Method for determining an ESD/latch-up strength of an integrated circuit Electricity 11 Expired
US8350355B2 Electrostatic discharge devices Electricity 8 Active
US7087938B2 ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuit Electricity 5 Expired
US7732834B2 Semiconductor ESD device and method of making same Electricity 5 Active
US7009404B2 Method and device for testing the ESD resistance of a semiconductor component Physics 5 Expired
US7694247B2 Identification of ESD and latch-up weak points in an integrated circuit Physics 4 Expired
US8956924B2 Method of forming a semiconductor device including a silicon controlled rectifier Electricity 4 Active
US7359169B2 Circuit for protecting integrated circuits against electrostatic discharges Electricity 3 Expired
US8178897B2 Semiconductor ESD device and method of making same Electricity 3 Active
US7985983B2 Semiconductor ESD device and method of making same Electricity 3 Active
US7279726B2 ESD protection device Electricity 2 Expired
US6884688B2 Method for producing a MOS transistor and MOS transistor Electricity 2 Expired
US9263430B2 Semiconductor ESD device and method of making same Electricity 1 Active
US8623731B2 Methods of forming electrostatic discharge devices Electricity 1 Active
US7202527B2 MOS transistor and ESD protective device each having a settable voltage ratio of the lateral breakdown voltage to the vertical breakdown voltage Electricity 1 Expired
US8791547B2 Avalanche diode having an enhanced defect concentration level and method of making the same Electricity 1 Active
US8471292B2 Semiconductor ESD device and method of making same Electricity 1 Active
US12244137B2 ESD protection for multi-die integrated circuits (ICs) including integrated passive devices Electricity 0 Active
US7679103B2 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor Emerging Cross-Sectional Technologies 0 Active
US7888701B2 Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor Emerging Cross-Sectional Technologies 0 Active
US11121126B2 Silicon controlled rectifier and manufacturing method therefor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.