Method for determining corrections to features of a mask
US11126089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2020 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Apr 14, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/7065
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.