Crack-resistant semiconductor devices

US11127656B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Jochen Kraft · Bruck an der Mur, AT
• Georg Parteder · Gleisdorf, AT
• Anderson Singulani · Graz, AT
• Raffaele Coppeta · Graz, AT
• Franz Schrank · Graz, AT

Key dates

• Filing date: Feb 14, 2018
• Grant date: Sep 21, 2021
• Expiry date: Feb 14, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/06181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.