Substrate for front side type imager and method of manufacturing such a substrate
US11127775B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Jan 10, 2018 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Jan 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for a front-side-type image sensor includes, successively, a supporting semiconductor substrate, an electrically insulating layer, and a semiconductor layer, known as the active layer. The active layer is an epitaxial layer of silicon-germanium having a germanium content of less than 10%. The disclosure also relates to a method for the production of such a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.