Asymmetrical lateral heterojunction bipolar transistors

US11127843B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Judson R. Holt · Wappingers Falls, US
• Alexander M. Derrickson · Troy, US
• Ryan Sporer · Mechanicville, US
• George R. Mulfinger · Gansevoort, US
• Alexander L. Martin · Saratoga Springs, US
• Jagar Singh · Clifton Park, US

Key dates

• Filing date: Jan 3, 2020
• Grant date: Sep 21, 2021
• Expiry date: Jan 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76283
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A base layer is positioned in a cavity in a semiconductor layer, a first terminal is coupled to the base layer, and a second terminal is coupled to a portion of the semiconductor layer. The second terminal is laterally spaced from the first terminal, and the portion of the semiconductor layer is laterally positioned between the second terminal and the base layer.