Power transistor device including first and second transistor cells having different on-resistances for improved thermal stability
US11127853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Oct 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor device is disclosed. The transistor device includes: a semiconductor body; a source conductor on top of the semiconductor body; a source clip on top of the source conductor and electrically connected to the source conductor; a first active device region arranged in the semiconductor body, covered by the source conductor and the source clip, and including at least one device cell; and a second active device region arranged in the semiconductor body, covered by regions of the source conductor that are not covered by the source clip, and including at least one device cell. The first active device region has a first area specific on-resistance and the second active device region has a second area specific on-resistance, the second area specific on-resistance being greater than the first area specific on-resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.