Oxidation reduction for SiOC film
US11133177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Jun 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02345
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein generally related to methods for forming a flowable low-k dielectric layer over a trench formed on a surface of a patterned substrate. The methods include delivering a silicon and carbon containing precursor into a substrate processing region of a substrate processing chamber for a first period of time and a second period of time, flowing an oxygen-containing precursor into a remote plasma region of a plasma source while igniting a remote plasma to form a radical-oxygen precursor, flowing the radical-oxygen precursor into the substrate processing region at a second flow rate after the first period of time has elapsed and during the second period of time, and exposing the silicon and carbon containing dielectric precursor to electromagnetic radiation for a third period of time after the second period of time has elapsed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.