Martin Jay Seamons
37Patents
8h-index
107Co-inventors
78Inventor score
Filing activity: Jul 14, 1995 → Feb 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6413321B1 | Method and apparatus for reducing particle contamination on wafer backside during CVD process | Chemistry; Metallurgy | 589 | Expired |
| US6913938B2 | Feedback control of plasma-enhanced chemical vapor deposition processes | Emerging Cross-Sectional Technologies | 83 | Expired |
| US6060397A | Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus | Emerging Cross-Sectional Technologies | 55 | Expired |
| US8361906B2 | Ultra high selectivity ashable hard mask film | Electricity | 53 | Active |
| US8536065B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 46 | Active |
| US6051284A | Chamber monitoring and adjustment by plasma RF metrology | Electricity | 27 | Expired |
| US7407893B2 | Liquid precursors for the CVD deposition of amorphous carbon films | Electricity | 21 | Expired |
| US8993454B2 | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration | Electricity | 14 | Active |
| US6868856B2 | Enhanced remote plasma cleaning | Emerging Cross-Sectional Technologies | 7 | Expired |
| US9299581B2 | Methods of dry stripping boron-carbon films | Electricity | 7 | Active |
| US7867578B2 | Method for depositing an amorphous carbon film with improved density and step coverage | Electricity | 6 | Active |
| US6843881B2 | Detecting chemiluminescent radiation in the cleaning of a substrate processing chamber | Physics | 6 | Expired |
| US9390910B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 5 | Active |
| US10100408B2 | Edge hump reduction faceplate by plasma modulation | Electricity | 3 | Active |
| US8105465B2 | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) | Electricity | 3 | Active |
| US10580623B2 | Plasma processing using multiple radio frequency power feeds for improved uniformity | Electricity | 3 | Active |
| US7776516B2 | Graded ARC for high NA and immersion lithography | Electricity | 3 | Active |
| US8282734B2 | Methods to improve the in-film defectivity of PECVD amorphous carbon films | Chemistry; Metallurgy | 3 | Active |
| US9337072B2 | Apparatus and method for substrate clamping in a plasma chamber | Electricity | 2 | Active |
| US10373822B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 2 | Active |
| US8513129B2 | Planarizing etch hardmask to increase pattern density and aspect ratio | Electricity | 1 | Active |
| US11133177B2 | Oxidation reduction for SiOC film | Electricity | 1 | Active |
| US7514125B2 | Methods to improve the in-film defectivity of PECVD amorphous carbon films | Chemistry; Metallurgy | 1 | Active |
| US9837265B2 | Gas flow profile modulated control of overlay in plasma CVD films | Electricity | 1 | Active |
| US7094442B2 | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.