Workpiece processing method
US11133192B2 · kind B2 · utility
1Cited by
0References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2019 |
| Grant date | Sep 28, 2021 |
| Priority date | — |
| Expiry date | Dec 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28132
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.