Patent · US Active

Optical arrangement for EUV radiation with a shield for protection against the etching effect of a plasma

US11137687B2 · kind B2 · utility

0Cited by

3References

15Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Bjoern Liebaug · Ulm, DE
Moritz Becker · Stuttgart, DE
Kerstin Hild · Schwäbisch Gmünd, DE
Joachim Hartjes · Aalen, DE
Simon Haas · Pfaffenhofen an der Ilm, DE

Key dates

Filing date	Jan 31, 2020
Grant date	Oct 5, 2021
Priority date	—
Expiry date	Jan 31, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG21K1/06
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optical arrangement (1) for EUV radiation includes: at least one reflective optical element (16) having a main body (30) with a coating (31) that reflects EUV radiation (33). At least one shield (36) is fitted to at least one surface region (35) of the main body (30) and protects the at least one surface region (35) against an etching effect of a plasma (H+, H*) that surrounds the reflective optical element (16) during operation of the optical arrangement (1). A distance (A) between the shield (36) and the surface region (35) of the main body (30) is less than double the Debye length (λD), preferably less than the Debye length (λD), of the surrounding plasma (H+, H*).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.