Method for fabricating semiconductor device
US11139384B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 4, 2019 |
| Grant date | Oct 5, 2021 |
| Priority date | — |
| Expiry date | Sep 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.
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