High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US11142844B2 · kind B2 · utility
3Cited by
23References
45Claims
0Family size
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Key dates
| Filing date | Jun 6, 2017 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Jun 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×1014 atoms/cm3 and/or germanium at a concentration of at least about 1×1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.