Patent · US Active

Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3

US11143953B2 · kind B2 · utility

0Cited by

13References

19Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Robert L. Sandstrom · Chestnut Ridge, US
Peter H. Bartlau · South Burlington, US
Thomas B. Faure · Saint Albans, US
Supratik Guha · Croton-on-Hudson, US
Edward W. Kiewra · Burlington, US
Louis M. Kindt · Colchester, US
Alfred Wagner

Key dates

Filing date	Mar 21, 2019
Grant date	Oct 12, 2021
Priority date	—
Expiry date	Jul 13, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/68
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.