Method and apparatus for etching target object
US11145518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2019 |
| Grant date | Oct 12, 2021 |
| Priority date | — |
| Expiry date | Oct 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.