Patent · US Active

Semiconductor devices having cutouts in an encapsulation material and associated production methods

US11145563B2 · kind B2 · utility

0Cited by

4References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Geissler · Teugn, DE
Walter Hartner · Munich, DE
Claus Waechter · Sinzing, DE
Maciej Wojnowski · Munich, DE

Key dates

Filing date	Jun 20, 2019
Grant date	Oct 12, 2021
Priority date	—
Expiry date	Jun 26, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/18
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.