Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory

US11145663B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Grenouillet · Voiron, FR
• Christelle Charpin-Nicolle · Grenoble, FR
• Jean Coignus · Grenoble, FR
• Terry Francois · Grenoble, FR
• Sebastien Kerdiles · Meylan, FR

Key dates

• Filing date: Dec 18, 2019
• Grant date: Oct 12, 2021
• Expiry date: Jan 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method of fabrication of a ferroelectric memory including a first electrode, a second electrode and a layer of active material made of hafnium dioxide HfO2 positioned between the first electrode and the second electrode, where the method includes depositing a first electrode layer; depositing the layer of active material; doping the layer of active material; depositing a second electrode layer; wherein the method includes sub-microsecond laser annealing of the layer of doped active material.