Doped through-contact structures

US11145726B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Sushant Mittal · Bengaluru, IN
• Ashish Pal · Hayward, US
• El Mehdi Bazizi · Saratoga Springs, US
• Angada Bangalore Sachid · Sherghati, IN

Key dates

• Filing date: Oct 16, 2019
• Grant date: Oct 12, 2021
• Expiry date: Oct 16, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

Semiconductor structures may include a substrate. The structures may include a gate structure overlying the substrate and formed in a first direction across the substrate. The structures may include a fin overlying the substrate and formed in a second direction across the substrate. The second direction may be orthogonal to the first direction, and the fin may intersect the gate structure. The structures may include a source/drain material formed about the fin. The structures may include a through-contact material extending vertically above the source/drain material. The structures may include a metal material extending vertically above the through-contact material. An interface between the metal material and the through-contact material may be characterized by a non-planar profile.