Ashish Pal
10Patents
3h-index
22Co-inventors
56Inventor score
Filing activity: Feb 12, 2009 → Jan 25, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8405121B2 | Semiconductor devices | Electricity | 7 | Active |
| US8878234B2 | Semiconductor devices | Electricity | 4 | Active |
| US11211286B2 | Airgap formation processes | Electricity | 3 | Active |
| US12402351B2 | Gate all around device with fully-depleted silicon-on-insulator | Emerging Cross-Sectional Technologies | 0 | Active |
| US8969924B2 | Transistor-based apparatuses, systems and methods | Electricity | 0 | Active |
| US12074196B2 | Gradient doping epitaxy in superjunction to improve breakdown voltage | Electricity | 0 | Active |
| US11735467B2 | Airgap formation processes | Electricity | 0 | Active |
| US11699755B2 | Stress incorporation in semiconductor devices | Electricity | 0 | Active |
| US11705490B2 | Graded doping in power devices | Electricity | 0 | Active |
| US11145726B2 | Doped through-contact structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.