Selectively etching materials
US11152219B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2019 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Jun 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluoride; and a metal corrosion inhibitor; wherein the composition has a pH in the range of from 3 to 8. Aqueous etching compositions and uses are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.