Crystalline oxide semiconductor
US11152472B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Jan 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.