Photodetector with reflector with air gap adjacent photodetecting region
US11152520B1 · kind B1 · utility
1Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 2020 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | May 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/122
Abstract
A photodetector includes a photodetecting region in a semiconductor substrate, and a reflector extending at least partially along a sidewall of the photodetecting region in the semiconductor substrate. The reflector includes an air gap defined in the semiconductor substrate. The reflector allows use of thinner germanium for the photodetecting region. The air gap may have a variety of internal features to direct electromagnetic radiation towards the photodetecting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.