Measurement methodology of advanced nanostructures
US11156548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Mar 19, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/213
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.