Lithography composition, a method for forming resist patterns and a method for making semiconductor devices
US11156920B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Nov 21, 2017 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Nov 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.