Monitoring device, monitoring method and method of manufacturing semiconductor device using reflectivity of wafer
US11158510B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Apr 24, 2019 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Oct 24, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8416
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.