Patterning line cuts before line patterning using sacrificial fill material

US11158536B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel James Dechene · Watervliet, US
• Timothy Mathew Philip · Albany, US
• Somnath Ghosh · Cumming, US
• Robert R. Robison · Colchester, US

Key dates

• Filing date: Jan 7, 2020
• Grant date: Oct 26, 2021
• Expiry date: May 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31111
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method includes forming a dielectric layer on a semiconductor substrate, forming a hard mask layer on the dielectric layer, forming a sacrificial mandrel layer on the hard mask layer, depositing a sacrificial fill material in an opening in the sacrificial mandrel layer and utilizing the sacrificial fill material to selectively pattern the hard mask layer. The pattern defining first and second spaced openings in the hard mask layer. The method further includes etching the dielectric layer through the first and second openings in the hard mask layer to create first and second trenches in the dielectric layer separated by a dielectric segment of the dielectric layer.