Three-dimensional integrated package device for high-voltage silicon carbide power module
US11158609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2020 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | May 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a three-dimensional integrated package device for a high-voltage silicon carbide power module, comprising a source substrate, first chip submodules, a first driving terminal, a first driving substrate, a ceramic housing, a metal substrate, a water inlet, a water outlet, second chip submodules, a second driving terminal, a second driving substrate and a drain substrate from top to bottom; and each first chip submodule is composed of a driving connection substrate, a power source metal block, a first driving gate metal post, second driving gate metal posts, a silicon carbide bare chip, an insulation structure and the like. A three-dimensional integrated half-bridge structure is adopted to greatly reduce corresponding parasitic parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.