Quantum well stacks for quantum dot devices

US11158731B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ravi Pillarisetty · Portland, US
• Van H. Le · Portland, US
• Nicole K. Thomas · Portland, US
• Hubert C. George · Portland, US
• Jeanette M. Roberts · North Plains, US
• Payam Amin · Portland, US
• Zachary R. Yoscovits · Beaverton, US
• Roman Caudillo · Portland, US
• James S. Clarke · Portland, US
• Roza Kotlyar · Portland, US
• Kanwaljit Singh · Rotterdam, NL

Key dates

• Filing date: Sep 28, 2017
• Grant date: Oct 26, 2021
• Expiry date: Sep 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/608
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a (111) silicon substrate, a (111) germanium quantum well layer above the substrate, and a plurality of gates above the quantum well layer. In some embodiments, a quantum dot device may include a silicon substrate, an insulating material above the silicon substrate, a quantum well layer above the insulating material, and a plurality of gates above the quantum well layer.