Transistor device having a source region segments and body region segments
US11158734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Jul 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
In at least one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode, and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench, and a source region of a first conductivity type disposed in a top portion of the mesa region. The apparatus includes a plurality of body region segments of a second conductivity type disposed in the side of the mesa region. The plurality of body region segments define an alternating pattern with the plurality of source region segments along the side of the mesa region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.