Strain and kinetics control during separation phase of imprint process
US11161280B2 · kind B2 · utility
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30References
10Claims
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Key dates
| Filing date | Jan 31, 2019 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Jul 8, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.