Methods for reducing material overhang in a feature of a substrate
US11162170B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2015 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Mar 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.