Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device
US11165015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.