ReRAM structure and method of fabricating the same

US11165019B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Shih-Min Chou · Tainan, TW
• Kuo-Chih Lai · Tainan, TW
• Wei-Ming Hsiao · Tainan, TW
• Hui-Ting Lin · Tainan, TW
• Szu-Yao Yu · Tainan, TW
• Nien-Ting Ho · Tainan, TW
• Hsin-Fu Huang · Yuanchang, TW
• Chin-Fu Lin · Tainan, TW

Key dates

• Filing date: Sep 20, 2019
• Grant date: Nov 2, 2021
• Expiry date: Oct 10, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

An ReRAM structure includes a dielectric layer. A first ReRAM and a second ReRAM are disposed on the dielectric layer. The second ReRAM is at one side of the first ReRAM. A trench is disposed in the dielectric layer between the first ReRAM and the second ReRAM. The first ReRAM includes a bottom electrode, a variable resistive layer and a top electrode. The variable resistive layer is between the bottom electrode and the top electrode. A width of the bottom electrode is smaller than a width of the top electrode. The width of the bottom electrode is smaller than a width of the variable resistive layer.