Method of manufacturing semiconductor device and recording medium
US11168396B2 · kind B2 · utility
0Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2019 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Sep 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.