Deposition method
US11170999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2020 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Jan 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition method includes forming a nitride film on a surface of a substrate; and performing, after the depositing, plasma purging supplying a noble gas activated as a plasma. The forming of the nitride film includes a) forming adsorption inhibitors on the surface of the substrate, by supplying a chlorine gas activated by a plasma and by causing the activated chlorine gas to be adsorbed on the surface of the substrate; b) causing a raw material gas, containing silicon and chlorine or a metal and chlorine, to be adsorbed on a region in the surface of the substrate on which the adsorption inhibitors are not present, by supplying the raw material gas on the surface of the substrate; and c) depositing the nitride film on the surface of the substrate, by supplying a nitriding gas to cause the raw material gas to be reacted with the nitriding gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.