Diode laser for wafer heating for EPI processes

US11171023B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Schubert S. Chu · San Francisco, US
• Douglas E. Holmgren · Portland, US
• Kartik Shah · Saratoga, US
• Palamurali GAJENDRA · Bengaluru, IN
• Nyi O. Myo · San Jose, US
• Preetham Rao · Bengaluru, IN
• Kevin Joseph Bautista · San Jose, US
• Zhiyuan Ye · San Jose, US
• Martin A. Hilkene · Gilroy, US
• Errol Antonio C. Sanchez · Tracy, US
• Richard O. Collins · Santa Clara, US

Key dates

• Filing date: Oct 7, 2016
• Grant date: Nov 9, 2021
• Expiry date: May 23, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68764
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.