Methods for forming cobalt and ruthenium capping layers for interconnect structures

US11171046B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Feng Chen · San Jose, US
• Yufei Hu · Fremont, US
• Wenjing Xu · San Jose, US
• Gang Shen · Shanghai, CN
• Zhiyuan Wu · Shanghai, CN
• Tae Hong Ha · Seodaemun-gu, KR

Key dates

• Filing date: Apr 1, 2020
• Grant date: Nov 9, 2021
• Expiry date: Apr 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76882
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.