Feng Chen
14Patents
1h-index
37Co-inventors
43Inventor score
Filing activity: Jun 7, 2019 → Dec 19, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11164780B2 | Process integration approach for selective metal via fill | Electricity | 1 | Active |
| US11586160B2 | Reducing substrate surface scratching using machine learning | Physics | 1 | Active |
| US11764157B2 | Ruthenium liner and cap for back-end-of-line applications | Electricity | 0 | Active |
| US11527437B2 | Methods and apparatus for intermixing layer for enhanced metal reflow | Electricity | 0 | Active |
| US12148660B2 | Low resistance and high reliability metallization module | Electricity | 0 | Active |
| US12211743B2 | Method of forming a metal liner for interconnect structures | Electricity | 0 | Active |
| US11587873B2 | Binary metal liner layers | Electricity | 0 | Active |
| US12431358B2 | Methods and materials for enhanced barrier performance and reduced via resistance | Electricity | 0 | Active |
| US11835927B2 | Reducing substrate surface scratching using machine learning | Physics | 0 | Active |
| US11784127B2 | Ruthenium liner and cap for back-end-of-line | Electricity | 0 | Active |
| US12157943B2 | Methods of selective deposition | Electricity | 0 | Active |
| US11955382B2 | Reverse selective etch stop layer | Electricity | 0 | Active |
| US11939666B2 | Methods and apparatus for precleaning and treating wafer surfaces | Electricity | 0 | Active |
| US11171046B2 | Methods for forming cobalt and ruthenium capping layers for interconnect structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.