Selective deposition with SAM for fully aligned via

US11171054B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Son V. Nguyen · Irvine, US
• Rudy J. Wojtecki · San Jose, US
• Noel Arellano · Merced, US
• Alexander Edward Hess · San Jose, US
• Thomas J. Haigh, Jr. · Claverack, US
• Cornelius Brown Peethala · Slingerlands, US
• Balasubramanian S. Pranatharthi Haran · Watervliet, US

Key dates

• Filing date: Apr 1, 2020
• Grant date: Nov 9, 2021
• Expiry date: Apr 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/535
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.