Metalization repair in semiconductor wafers
US11171063B2 · kind B2 · utility
0Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2017 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Feb 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments are directed to a method for repairing features of a host semiconductor wafer. The method includes forming a feature of the host semiconductor wafer, wherein the feature includes a first conductive material and a surface having a planar region and non-planar regions. The method further includes forming a metal conductive liner over the non-planar regions. The method further includes applying a second conductive material metal layer over said the conductive liner. The method further includes recessing the second conductive material to be substantially planar with the planar region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.