Memory devices based on capacitors with built-in electric field
US11171145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2018 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Mar 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments herein describe techniques for an integrated circuit (IC). The IC may include a capacitor. The capacitor may include a first electrode, a second electrode, and a paraelectric layer between the first electrode and the second electrode. A first interface with a first work function exists between the paraelectric layer and the first electrode. A second interface with a second work function exists between the paraelectric layer and the second electrode. The paraelectric layer may include a ferroelectric material or an anti-ferroelectric material. A built-in electric field associated with the first work function and the second work function may exist between the first electrode and the second electrode. The built-in electric field may be at a voltage value where the capacitor may operate at a center of a memory window of a polarization-voltage hysteresis loop of the capacitor. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.