Transistor structures with a metal oxide contact buffer

US11171243B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Gilbert Dewey · Beaverton, US
• Abhishek A. Sharma · Hillsboro, US
• Van H. Le · Portland, US
• Jack T. Kavalieros · Portland, US
• Shriram Shivaraman · Hillsboro, US
• Seung Hoon Sung · Beaverton, US
• Tahir Ghani · Portland, US
• Arnab Sen Gupta · Beaverton, US
• Nazila Haratipour · Hillsboro, US
• Justin R. Weber · Portland, US

Key dates

• Filing date: Jun 27, 2019
• Grant date: Nov 9, 2021
• Expiry date: Jun 27, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

Transistor structures may include a metal oxide contact buffer between a portion of a channel material and source or drain contact metallization. The contact buffer may improve control of transistor channel length by limiting reaction between contact metallization and the channel material. The channel material may be of a first composition and the contact buffer may be of a second composition.