Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer
US11181821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2018 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | Apr 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The invention provides a composition for forming an organic film, which generates no by-product even under such a film formation condition in an inert gas to prevent substrate corrosion, which is capable of forming an organic film not only excellent in properties of filling and planarizing a pattern formed on a substrate but also favorable for dry etching resistance during substrate processing, and further which causes no fluctuation in film thickness of the film due to thermal decomposition even when a CVD hard mask is formed on the organic film. The composition for forming an organic film includes (A) a polymer having a repeating unit shown by the following general formula (1) and (B) an organic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.